Ritaskrß Hafli­a PÚturs GÝslasonar
Haflidi Petur Gislason: List of publications



Doktorsritger­ - Doctoral thesis     -     Greinar birtar Ý ISI tÝmaritum - Articles in ISI-journals -
Greinar Ý ritrřndum frŠ­iritum - Articles in other peer-reviewed journals     -     Greinar birtar Ý ˇritrřndum tÝmariti - Articles in other journals -
Greinar Ý ritrřndum rß­stefnuritum - Conference proceedings -     -     Bˇkarkaflar - Articles in other conf. proceedings     -    ┌tdrŠttir - printed abstracts




A 1.2
Doktorsritger­
     
Doctoral thesis      

Photoluminescence Studies of Deep Level Impurities in Gallium Phosphide and Gallium Nitride.
Doctoral Dissertation, Lund (1981).



tilbaka

A 3.1
Greinar birtar Ý ISI e­a sambŠrilegum ritum -
      Íll tÝmaritin eru í Science Citation Index
Articles in ISI-journals or equivalent journals -       All of the journals are listed in Science Citation Index
  1. O. Lagerstedt, B. Monemar, and H.P. Gislason,
    Properties of GaN tunneling light emitting diodes. J. Appl. Phys. 49 (1978).

  2. B. Monemar, L. Samuelson, O. Lagerstedt, H.P. Gislason, and P.O. Holtz,
    Temperature dependence of optical properties of deep impurity levels in semiconductors studied by photoluminescence. J. Luminescence 18/19 (1979).

  3. B. Monemar, O. Lagerstedt, and H.P. Gislason,
    Properties of Zn-doped VPE grown GaN: I. Luminescence data in relation to doping conditions. J. Appl. Phys. 51, 625 (1980).

  4. B. Monemar, H.P. Gislason, and O. Lagerstedt,
    Properties of Zn-doped VPE-grown GaN. II. Optical cross sections. J. Appl. Phys. 51, 640 (1980).

  5. P.J. Dean, B. Monemar, H.P. Gislason, and D.C. Herbert, The COL spectrum in GaP. J. Luminescence 24/25, 401 (1981).

  6. B. Monemar, H.P. Gislason, P.J. Dean, and D.C. Herbert,
    Optical properties of the Characteristic Orange Luminescence center in GaP. Phys. Rev. B25, 7719 (1982).

  7. H.P. Gislason, B. Monemar, P.O. Holtz, P.J. Dean, and D.C. Herbert,
    Thermal behaviour of the Cu-related 2. 177 eV bound exciton in GaP. J. Phys. C15, 5467 (1982).

  8. H.P. Gislason, B. Monemar, P.J. Dean, D.C. Herbert, S. Depinna, B.C. Cavenett, and N. Killoran,
    Photoluminescence studies of the 1.911 eV Cu-related complex in GaP. Phys. Rev. B26, 827 (1982).

  9. H.P. Gislason, B. Monemar, P.J. Dean, and D.C. Herbert,
    Crystal field splitting of excitons bound to neutral complexes of GaP. Physica 117 & 118B, 269 (1983).

  10. B. Monemar, P.O. Holtz, H.P. Gislason, N. Magnea, Ch. Uihlein and P.L. Liu,
    Radiative recombination of bound excitons with site transfer final state excitations in Cu-doped ZnTe.
    J. Luminescence 31 & 32, 476 (1984).

  11. H.P. Gislason, B. Monemar, M.E. Pistol, P.J. Dean, D.C. Herbert, A. Kana'ah, and B. C.Cavenett,
    Neutral (Cu-Li) complexes in GaP: The (Cu-Li)I bound exciton at 2.306 eV. Phys. Rev. B31, 3774 (1985).

  12. Z.G. Wang, H.P. Gislason, and B. Monemar,
    Acceptor associates and bound excitons in GaAs:Cu. J. Appl. Phys. 58, 230 (1985).

  13. H.P. Gislason, Z.G. Wang, and B. Monemar,
    Evidence for complex acceptors related to Cu and Li in GaAs. J. Appl. Phys. 58, 240 (1985).

  14. B. Monemar, H.P. Gislason, and Z.G. Wang,
    Localization of excitons to Cu-related defects in GaAs. Phys. Rev. B31, 7919 (1985).

  15. H.P. Gislason, B. Monemar, M.E. Pistol, P.J. Dean, D.C. Herbert, S. Depinna, A.Kana'ah, and B.C. Cavenett,
    Neutral (Cu-Li) complexes in GaP: The (Cu-Li)-III bound exciton at 2.242 eV. Phys. Rev. B32, 3958 (1985).

  16. B. Monemar, P.O. Holtz, H.P. Gislason, N. Magnea, Ch. Uihlein, and P.L. Liu,
    Optical properties of defects created by Ag diffusion in ZnTe. Phys. Rev. B32, 3244, (1985).

  17. P.O. Holtz, B. Monemar, H.P. Gislason, Ch. Uihlein, and P.L. Liu,
    Novel recombination mechanism for interacting bound exciton complexes in Cu-doped ZnTe. Phys. Rev. B32, 3730 (1985).

  18. H.P. Gislason, B. Monemar, Z.G. Wang, Ch. Uihlein, and P.L. Liu,
    Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centres in GaAs. Phys. Rev. B32, 3723 (1985).

  19. M. Godlewski, W.M. Chen, M.E. Pistol, B. Monemar, and H.P. Gislason,
    Investigation of a deep Li-related complex in GaP by optically detected magnetic resonance. Phys. Rev. B32, 6650 (1985).

  20. H.P. Gislason, F. Rong, and G.D. Watkins,
    Optically detected magnetic resonance of a localized spin triplet midgap center in GaAs, Phys. Rev. B32, 6945 (1985).

  21. H.P. Gislason, M.E. Pistol, B. Monemar, A. Kana'ah, and B.C. Cavenett,
    Neutral Cu-Li complexes in GaP. The (Cu-Li)V bound exciton at 2.172 eV. Phys. Rev. B33, 1233 (1986).

  22. H.P. Gislason, and G.D. Watkins,
    ODMR investigation of nonradiative recombination via the AsGa antisite in Gallium Arsenide. Phys. Rev. B33, 2957 (1986).

  23. B. Monemar, H.P. Gislason, W.M. Chen, and Z.G. Wang,
    Electronic properties of an electron attractive complex defect in GaAs:Cu, Zn. Phys. Rev. B33, 4424 (1986).

  24. A. Kana'ah, B.C. Cavenett, H.P. Gislason, B. Monemar and M.E. Pistol,
    An ODMR investigation of the (Cu-Li)I and (Cu-Li)III complex defects in GaP. J. Phys. C19, 1239 (1986).

  25. B. Monemar, P.O. Holtz, H.P. Gislason, and N. Magnea, Complex defects in ZnTe created by Cu diffusion. J. Luminescence 34, 245 (1986).

  26. B. Monemar, P.O. Holtz, W.M. Chen, H.P. Gislason, U. Lindefelt and M.E. Pistol,
    Optical properties and excitation-induced distortion of a trigonal Cu-related neutral complex bound exciton at 2.26 eV in ZnTe. Phys. Rev. B34, 8656 (1986).

  27. D. Jeon, H.P. Gislason, and G.D. Watkins,
    ODMR-MCD study of the Zinc vacancy and related complexes in ZnSe. Materials Science Forum 10-12, 851 (1986)

  28. A. Kana'ah, B.C. Cavenett, B. Monemar, and H.P. Gislason,
    An ODMR study of close DA pair luminescence involving Cu and Li complexes in GaP. Semiconductor Science and Technology 2, 151 (1987).

  29. A. Kana'ah, B.C. Cavenett, H.P. Gislason, and B. Monemar,
    Optical properties of deep (Cu-Li)-related neutral complexes in GaP. Semiconductor Science and Technology 2, 299 (1987).

  30. W.M. Chen, B. Monemar, P.O. Holtz, X.Q. Zhao, and H.P. Gislason, Electronic properties of a complex Cu-related acceptor with a bound exciton at 2.3423 eV in ZnTe. Phys. Rev. B 35, 5714 (1987).

  31. W.M. Chen, X.Q. Zhao, B. Monemar, H.P. Gislason, and P.O. Holtz,
    Electronic structure of a hole-attractive neutral Cu-related complex-defect bound exciton at 2.345 eV in ZnTe. Phys. Rev. B 35, 5722 (1987).

  32. D.Y. Jeon, H.P. Gislason, J.F. Donegan and G.D. Watkins,
    Identification of the PIn antisite in InP by ODENDOR. Phys. Rev. B36, 1324 (1987).

  33. B. Monemar, W.M. Chen, P.O. Holtz and H.P. Gislason,
    Electronic structure of the 2.3149-eV complex defect in Ag-doped ZnTe. Phys. Rev. B36, 4831 (1987).

  34. W.M. Chen, H.P. Gislason and B. Monemar,
    A PGa antisite related neutral complex defect in GaP, studied with optically detected magnetic resonance. Phys. Rev. B36, 5058 (1987).

  35. W.M. Chen, B. Monemar, H.P. Gislason, M. Godlewski, and M.E. Pistol,
    Optically detected magnetic resonance studies of the 1.911 eV Cu-related complex in GaP. Phys. Rev. B37, 2558 (1988).

  36. H.P. Gislason, B. Monemar, P. Bergman, and M.E. Pistol,
    Optical properties of a neutral Cu-C complex defect in GaP. Phys. Rev. B38, 5466 (1988).

  37. H.P. Gislason,
    Triplet bound excitons in copper-doped Gallium Phosphide. Applied Physics A48, 11 (1989).

  38. K. Ando, A. Katsui, D.Y. Jeon, G.D. Watkins and H.P. Gislason,
    Characterization of an anion antisite defect as a deep double donor in InP. Materials Science Forum 38 761 (1989)

  39. H.P. Gislason, D. Jeon, K. Ando and G.D. Watkins,
    Magnetic circular dichroism studies of electron-irradiation induced defects in InP. Materials Science Forum 38 1145 (1989)

  40. H.P. Gislason, F. Rong, and G.D. Watkins,
    Different configurations of the PIn antisite in n- and p-type InP. Acta Physica Polonica A77, 51 (1990)

  41. H. P. Gíslason,
    Optical Detection of Magnetic Resonance in Semiconductors: Anion Antisites in Indium Phosphide. Applied Magnetic Resonance 2, 329-348 (1991).

  42. H.P. Gislason, H. Sun, R.E. Peale, and G.D. Watkins,
    Generation of anion-antisite defects in n-type, p-type and semi-insulating InP studed by ODMR and ODENDOR. Materials Science Forum 83-87, 905 (1992).

  43. H.P. Gislason, Baohua Yang, I.S. Hauksson, J.T. Gudmundsson, M. Linnarsson, and E. Janzén,
    Electrical and optical properties of GaAs doped with Li. Materials Science Forum 83-87, 985 (1992).

  44. H.P. Gislason, B.H. Yang and M. Linnarsson.
    Shifting photoluminescence bands in high-resistivity-Li-compensated GaAs. Phys. Rev. B47, 9418 (1993).

  45. H.P. Gislason, B.H. Yang, J. Pétursson and M. Linnarsson. Radiative recombination in n-type and p-type GaAs compensated with Li. J. Appl. Phys.47, 7275 (1993).

  46. B.H. Yang, H.P. Gislason, and M. Linnarsson. Lithium passivation of Zn- and Cd acceptors in p-type GaAs. Phys. Rev. B48, 12345 (1993).

  47. H.J. Sun, H.P. Gíslason, F. Rong, and G.D. Watkins.
    Different PIn antisites in n- and p-type InP. Phys. Rev. B48, 17092 (1993).

  48. D.Y. Jeon, H.P. Gislason and G.D. Watkins,
    Optical Detection of Magnetic Resonance of the Zinc Vacancy in ZnSe via Magnetic Circular Dichroism, Phys Rev. B48, 7872 (1993).

  49. B.H. Yang, T. Egilsson, S. Kristjánsson, J. Pétursson, and H.P. Gislason.
    Characterization of Defects in Li-diffused n-type GaAs. Materials Science Forum 143-147, 839 (1994).

  50. E.Ö. Sveinbjörnsson, S. Kristjánsson, and H.P. Gislason,
    Lithium-gold related defect complexes in n-type silicon. Physica Scripta T54, 12, (1994).

  51. T. Egilsson, B.H. Yang, and H.P. Gislason,
    Passivation of shallow and deep levels by lithium in GaAs. Physica Scripta T54, 28, (1994).

  52. T. Egilsson, H.P. Gislason, and B.H. Yang,
    Passivation of copper by lithium in p-type GaAs. Phys. Rev. B50, 1996 (1994)

  53. E.Ö. Sveinbjörnsson, S. Kristjánsson, and H.P. Gislason,
    Lithium-gold related defect complexes in n-type crystalline silicon. J. Appl. Phys. 77, 3146 (1995)

  54. H.P. Gislason, T. Egilsson, K. Leosson, and B.H. Yang,
    Lithium passivation and electric field assisted reactivation of acceptors in GaAs. Phys. Rev. B 51, 9677 (1995)

  55. H.P. Gislason and B.H. Yang,
    Bound exciton spectra in semi-insulating GaAs, Materials Science Forum 196-201, 201-206 (1995).

  56. H.P. Gislason, S. Kristjánsson and E.Ö. Sveinbjörnsson,
    Lithium-gold-related photoluminescence in n-type silicon, Materials Science Forum 196-201, 695-700 (1995).

  57. K. Leosson and H.P. Gislason,
    Reactivation kinetics of lithium-acceptor pairs in GaAs, Materials Science Forum 196-201, 1395-1400 (1995).

  58. S.Þ. Ingvarsson and H.P. Gislason,
    Time of flight in lithium compensated GaAs, Materials Science Forum 196-201, 1655-1660 (1995).

  59. B.H. Yang and H.P. Gislason,
    Electronic properties of GaAs doped with copper, Materials Science Forum 196-201, 713-718 (1995).

  60. J. Pétursson, S.Þ. Ingvarsson, B.H. Yang and H.P. Gislason,
    Oscillations in PLE spectra of Li-passivated GaAs related to interstitial Li donors, Materials Science Forum 196-201, 207-212 (1995).

  61. Hafliði P. Gislason,
    Passivation of impurities in semiconductors by hydrogen and light metal ions, Physica Scripta T69, 40 (1997).

  62. K. Leosson and H.P. Gislason,
    Thermal and electrical behaviour of Cu-related acceptors in Li-a nd H-passivated GaAs, Physica Scripta T69, 196 (1997).

  63. K. Leosson and H.P. Gislason,
    Diffusivity and defect reactions of lithium in GaAs, Phys. Rev. B56,9506-9511 (1997

  64. D. Seghier and H.P, Gislason,
    Effect of the interface on the electrical properties of ZnSe/GaAs heterojunctions grown by molecular beam epitaxy, Applied Physics Letters 71, 1-3 (1997)

  65. K. Leosson and H.P. Gislason,
    Low temperature intrinsic diffusion coefficient of lithium in GaAs, Materials Science Forum 258-263, 1827-1832 (1997).

  66. H.P. Gislason, K. Leosson, H. Svavarsson, K. Saarinen, and A. Mari,
    Lithium diffused vacancy formation and its effect on the diffusivity of lithium in gallium arsenide, Materials Science Forum 258-263, 1813-1820 (1997).

  67. D. Seghier and H.P. Gislason,
    Effects of copper diffusion on the native defect EL2 in GaAs, Materials Science Forum 258-263, 1003-1007 (1997).

  68. D. Seghier, I.S. Hauksson, H.P. Gislason, K.A. Prior, and B.C. Cavenett,
    Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE, Materials Science Forum 258-263, 1383-1388 (1997).

  69. I.S. Hauksson, D. Seghier, H.P. Gislason, K.A. Prior, and B.C. Cavenett,
    Study of hole traps in ZnSe and ZnSSe epilayers by DLTS and admittance spectroscopy, Materials Science Forum 258-263, 1671-1676 (1997).

  70. D. Seghier, I.S. Hauksson, H.P. Gislason, G.D. Brownlie, K.A. Prior, and B.C. Cavenett,
    Electrical characterization of hole traps in p-type ZnSe and ZnSSe grown by molecular beam epitaxy. Applied Physics Letters 72, 3026-3028 (1998)

  71. I.S. Hauksson, D. Seghier, H.P. Gislason, G.D. Brownlie, K.A. Prior, and B.C. Cavenett,
    DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe, Journal of Crystal Growth, 184-185 (1-4), 490-494 (1998).

  72. D. Seghier, I.S. Hauksson, H.P. Gislason, K.A. Prior, and B.C. Cavenett,
    Evidence of strong effect from the interface on the electrical characteristics of ZnSe/GaAs heterostructures, J. Appl. Phys. 85, 3721 (1999).

  73. D. Seghier and H.P. Gislason,
    Observation of persistent photoconductivity in N-doped p-type ZnSe/GaAs heterojunctions, J. Phys. D: Appl. Phys. 32, 369-373 (1999).

  74. D. Seghier and H.P. Gislason,
    Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:Mg. Physica B 273-274 (1999) 46-49

  75. D. Seghier and H.P. Gislason,
    The role of deep levels in the persistent photoconductivity in Mg-doped GaN grown by MOCVD. Physica B 273-274 (1999) 63-65

  76. J.T. Gudmundsson, H.G. Svavarsson and H.P. Gislason,
    Lithium-gold related complexes in p-type crystalline silicon. Physica B 273-274 (1999) 379-382

  77. H.Í. Ëlafsson, J.T. Gudmundsson, H.G. Svavarsson, and H.P. Gislason,
    Hydrogen passivation of AlxGa1-xAs/GaAs studied by surface photovoltage spectroscopy. Physica B 273-274 (1999) 689-692

  78. S. Arpiainen, K. Saarinen, J.T. Gudmundsson, and H.P. Gislason,
    Effect of lithium diffusion on the native defects in GaAs studied by positron annihilation spectroscopy. Physica B 273-274 (1999) 701-704

  79. D. Seghier, J.T. Gudmundsson and H.P. Gislason,
    Hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSSe grown by MBE. Physica B 273-274 (1999) 891-894

  80. D. Seghier and H.P. Gislason,
    Investigation of persistent photoconductivity in nitrogen-doped ZnSe/GaAs heterojunctions grown by MBE, J. Crystal Growth 214/215 (2000) 511-515

  81. C. Morhain, B. V÷gele, J.S. Milnes, K.A. Prior, B.C. Cavenett, D. Seghier, and H.P. Gislason,
    Properties of the nitrogen acceptor in Zn1-xMgxSe alloys with different Mg content, J. Crystal Growth 214/215 (2000) 482-486

  82. D. Seghier, J.T. Gudmundsson and H.P. Gislason,
    Direct observation of hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSxSe1-x grown by MBE, J. Crystal Growth 214/215 (2000) 478-481

  83. D. Seghier and H.P. Gislason,
    On Mg-related energy levels and compensation mechanism in GaN:Mg grown by metalorganic chemical vapor deposition, J. Appl. Phys. 88 (2000) 6483-6487

  84. D. Seghier and H.P. Gislason,
    Electrically active defects in AlGaN alloys grown by metalorganic chemical vapor deposition. Physica B 308-310 (2001) 130-133

  85. H.G. Svavarsson, J.T. Gudmundsson, G.I. Gudjonsson, and H.P. Gislason,
    The effect of Si site-switching in GaAs on electrical properties and potential fluctuation. Physica B 308-310 (2001) 804-807

  86. D. Seghier, H.P. Gislason, C. Morhain, M. Teisseire, E. Tournie, G. Neu, and J-P Faurie,
    Self-compensation of the phosphorus acceptetor in ZnSe, physica status solidi (b) No. 1. 251-255 (2002)

  87. G. Reynaldsson, S. Olafsson, H.P. Gislason, G. Song, and H. Sabel,
    Hydrogen interactions in ultra-thin two-dimensional vanadium layers. Journal of Magnetism and Magnetic Materials 240 (2002) 478-480

  88. H.G. Svavarsson, J.T. Gudmundsson, G.I. Gudjonsson, and H.P. Gislason,
    Potential fluctuations and site switching in Si-doped GaAs studied by photoluminescence. Physica Scripta T101, 114-118 (2002)

  89. D. Seghier and H.P. Gislason,
    Dependence of the Au/Al/GaN Schottky characterisation on Al content. Physica Scripta T101, 230-233 (2002)

  90. D. Seghier and H.P. Gislason,
    Correlation between deep levels and the persistent photoconductivity in Mg-doped GaN grown by MOCVD. J. Phys. D: Appl. Phys. 35 (2002) 1-4

  91. S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen, L. Liszkay, D. Seghier, and H.P. Gislason,
    Vacancy Defects as Compensating Centers in Mg-doped GaN. Phys. Rev. Letters 90, 137402 (2003)

  92. H.G. Svavarsson, J.T. Gudmundsson, and H.P. Gislason,
    Impurity band in lithium-diffused and annealed GaAs: Conductivity and Hall effect measurements. Phys. Rev. B 67, 205213 (2003)

  93. J.T. Gudmundsson, H.G. Svavarsson, S. Gudjonsson, and H.P. Gislason,
    Frequency-dependent conductivity in lithium-diffused and annealed GaAs. Physica B 340-342 (2003) 324-328

  94. D. Seghier and H.P. Gislason,
    Noise spectroscopy of metastable deep level defects in Mg-doped GaN. Physica B 340-342 (2003) 381-384

  95. D. Seghier and H.P. Gislason,
    Effect of hydrogenation on the electrical properties of n-type AlGaN. J. Phys. D: Appl. Phys. 36 (2003) 1-3.

  96. G. Reynaldsson, S. Olafsson, and H.P. Gislason,
    The influence on thermodynamical properties of hydrogen in (001) oriented Mo/V superlattices. Journal of Alloys and Compounds 356-357 (2003) 545-548

  97. G. Reynaldsson, S. Ólafsson, H.P. Gislason, G. Song, and H. Zabel,
    Hydrogen-induced lattice expansion in 8/4 u.c. Mo/V superlattice. Journal of Alloys and Compounds 356-357 (2003) 549-552

  98. H.G. Svavarsson, J.T. Gudmundsson, and H.P. Gislason, Lithium-diffused annealed GaAs: An admittance-spectroscopy study. Phys. Rev. B 69, 155209 (2004)

  99. D. Seghier and H.P. Gislason,
    Noise and its correlation to deep defects in Mg-doped GaN. Phys. D: Appl. Phys. 38 (2005) 843-846

  100. S. Hautakangas, V. Ranki, A. Makkonen, M.J. Puska, K. Saarinen, L. Liszkay, D. Seghier, and H.P. Gislason, J. Freitas, R.L. Henry, X. Xu, and D.C. Look,
    Gallium and nitrogen vacancies in GaN: impurity decoration effects. Proc. XXIII-th International Conference on Defects in Semiconductors, Osaka 2005.

  101. H.P. Gislason and D. Seghier
    Investigation of defects using generation-recombination noise. Optica Applicata, vol XXXVI, No. 2-3 (2006) 359-371.

tilbaka



A 3.2
Greinar birtar Ý ÷­rum ritrřndum frŠ­iritum -
     
Articles in other peer-reviewed journals      
  1. Sveinn Ólafsson og Hafliði P. Gíslason,
    Mælitækni og segulhermmumŠlinga, Ý: Eðlisfræði á Íslandi IV, ritstjórar Jakob Yngvason og Þorsteinn Vilhjálmsson, (1989), bls. 45-56.

  2. Einar Örn Sveinbjörnsson og Hafliði P. Gíslason,
    Ljómunarmælingar á Li íbættu GaAs. í Eðlisfræði á Íslandi IV, ritstjórar Jakob Yngvason og Þorsteinn Vilhjálmsson, (1989), bls. 57-66

  3. Hafliði P. Gíslason,
    Ljós og segulhermumælingar á andsætuveilum í hálfleiðurum, í Eðlisfræði á Íslandi IV, ritstjórar Jakob Yngvason og Þorsteinn Vilhjálmsson, (1989), bls. 76-95.

  4. Brynjólfur Þórsson og Hafliði P. Gíslason,
    Mælitækni við grunnrannsóknir í eðlisfræði þéttefnis við Raunvísindastofnun Háskólans, í Árbók VFÍ 1988 , ritstjóri Birgir Jónsson (1989), bls. 183-193.

  5. Jón Tómas Guðmundsson og Hafliði P. Gíslason,
    Rafmælingar á Li-íbættu GaAs, Í Eðlisfræði á Íslandi V. Ritstj. Leó Kristjánsson og Þorsteinn Vilhjálmsson (1991), bls. 161- 183.

  6. Hafliði P. Gíslason, Andsætuveilur í
    indíumfosfíði. Í Eðlisfræði á Íslandi V. Ritstj. Leó Kristjánsson og Þorsteinn Vilhjálmsson (1991), bls.111-125.

  7. Ísak Sverrir Hauksson og Hafliði P. Gíslason,
    Ljómunarmælingar á tvívíðum GaAs-AlGaAs sýnum. Í Eðlisfræði á Íslandi V, ritstj. Leó Kristjánsson og Þorsteinn Vilhjálmsson, (1991), bls. 141-159.

  8. Jón Pétursson, Bjarki A. Brynjarsson,
    og Hafliði P. Gíslason, Líftímar ljómunar í III-V hálfleiðurum. Í Eðlisfræði á Íslandi V, ritstj. Leó Kristjánsson og Þorsteinn Vilhjálmsson (1991), bls.195-207.

  9. Jón Tómas Guðmundsson, Kristján Leósson og Hafliði P. Gíslason,
    Rafmælingar á hálfleiðurum. Árbók VFÍ 1991, ritstjóri Birgir Jónsson (Verkfræðingafélag Íalands, 1991), bls. 230 - 240.

  10. Hafliði P. Gíslason,
    Mættisflökt í hálfleiðurum. Eðlisfræði á Íslandi VI. Eðlisfræðifélag Íslands, Reykjavík 1992, Ritstj. Grímur Björnsson. Bls. 19-30.

  11. Sigurgeir Kristjánsson, Bao Hua Yang, Kristján Leósson og Hafliði Pétur Gíslason,
    Íbæting litíns í gallín arsen hálfleiðara. Eðlisfræði á Íslandi VI. Eðlisfræðifélag Íslands, Reykjavík 1992, Ritstj. Grímur Björnsson. Bls. 169-175.

  12. Snorri Þ. Ingvarsson og Hafliði P. Gíslason,
    Samskeyti málma og hálfleiðara. Eðlisfræði á Íslandi VI. Eðlisfræðifélag Íslands, Reykjavík 1992, Ritstj. Grímur Björnsson. Bls. 139-147.

  13. Tryggvi Egilsson og Hafliði P. Gíslason,
    Djúpar veilur í hálfleiðurum. Eðlisfræði á Íslandi Eðlisfræði á Íslandi VI. Eðlisfræðifélag Íslands, Reykjavík 1992, Ritstj. Grímur Björnsson. Bls. 149-156.

  14. Jón Pétursson, Baohua Yang og Hafliði P. Gíslason, Ljómun: Samband hliðrunar og línuforms. Eðlisfræði á Íslandi VI. Eðlisfræðifélag Íslands, Reykjavík 1992, Ritstj. Grímur Björnsson. Bls. 9-18.

  15. Jón Pétursson, Snorri Þ. Ingvarsson, Sigurgeir Kristjánsson, Yang Baohua og Hafliði P. Gíslason,
    Heitar rafeindir í nykurrúmi GaAs, í Eðlisfræði á Íslandi VII, ritstj. Þórður Arason. (Eðlisfræðifélag Íslands, Reykjavík 1994) bls. 13

  16. Sigurgeir Kristjánsson og Hafliði P. Gíslason,
    Veilusameindir gulls og litíns í kísli, í Eðlisfræði á Íslandi VII, ritstj. Þórður Arason. (Eðlisfræðifélag Íslands, Reykjavík 1994) bls. 31.

  17. Lee Drage, Jón Pétursson og Hafliði P. Gíslason,
    Yfirborðshrif í ljómun, í Eðlisfræði á Íslandi VII, ritstj. Þórður Arason. (Eðlisfræðifélag Íslands, Reykjavík 1994) bls. 121.

  18. Kristján Leósson, Tryggvi Egilsson, Baohua Yang og Hafliði P. Gíslason,
    Rek og sveim hlutleysandi íbótar í hálfleiðarasamskeytum, í Eðlisfræði á Íslandi VII, ritstj. Þórður Arason. (Eðlisfræðifélag Íslands, Reykjavík 1994) bls. 167.

  19. Kristján Leósson og Hafliði P. Gíslason,
    Sveim í hálfleiðurum, í Eðlisfræði á Íslandi VIII, ritsj. Helga Tulinius, Eðlisfræðifélag Íslands, 1996, bls. 13-19

  20. Ísak Sverrir Hauksson, Djelloul Seghier og Hafliði Pétur Gíslason,
    Rafmælingar á II-VI hálfleiðurum, í Eðlisfræði á Íslandi VIII, ritsj. Helga Tulinius, Eðlisfræðifélag Íslands, 1996, bls. 21-29

  21. Halldˇr G. Svavarsson, Halldˇr Írn Ëlafsson, Ůorvaldur Ůorvaldsson, Jˇn Tˇmas Gu­mundsson og Hafli­i P. Gislason,
    Ljos÷rvu yfirbor­sspenna og hlutleysing veilna me­ vetni. E­lisfrae­i ß ═slandi IX, 1999. Ritstjˇri Ari Ëlafsson.

  22. D. Seghier og Hafli­i P. GÝslason,
    HŠg sl÷kun Ý GaN og AlGaN hßlflei­urum. E­lisfrŠ­i ß ═slandi X, ritstjˇri Ari Ëlafsson, bls. 133-122 (2002).

  23. Halldˇr G. Svavarsson, Gu­jˇn I. Gu­jˇnsson, Jˇn T. Gu­mundsson og Hafli­i PÚtur GÝslason,
    SŠtavÝxl kÝsils Ý GaAs. E­lisfrŠ­i ß ═slandi X, ritstjˇri Ari Ëlafsson, bls. 123-128 (2002).


tilbaka

A 3.4
Greinar birtar Ý ˇritrřndum tÝmariti -
     
Articles in other journals      
  1. Hafliði P. Gíslason,
    Eiga rannsóknir í eðlisfræði hálfleiðara erindi til Íslands? Fréttabréf Eðlisfræðifélags Íslands, Ritstj. Þorsteinn I. Sigfússon, Nr. 11. apríl 1987, bls. 3-14.

  2. Hafliði P. Gíslason,
    Við upphaf nýrra rannsókna á Íslandi. í Grunnrannsóknum á Íslandi, Ritstjóri Ólafur Halldórsson, (1988) bls. 37-46.

  3. Hafliði P. Gíslason,
    Nóbelsverðlaunin í eðlisfræði 1989 Fréttabréf Háskóla Íslands 9. tbl. 1989, bls. 13 - 15.

  4. Brynjólfur Þórsson og Hafliði P. Gíslason,
    Tölvustýringar og gagnasöfnun við rannsóknir í eðlisfræði þéttefnis. Raflost 1989 bls 38.

  5. Kristján Leósson og Hafliði P. Gíslason,
    Hálfleiðarar í hátækniiðnaði, Raflost 1997, bls. 7-10.

  6. Hafliði Pétur Gíslason,
    Hundrað ára rafeind. Í afmælisriti Davíðs Oddsonar, ritstj. Hannes H. Gissurarson, Jón Steinar Gunnlaugsson og Þórarinn Eldjárn, Reykjavík 1998. bls. 399-413.

  7. Hafli­i P. GÝslason,
    Rafeindir a timamotum, Raflost 1999, bls. 38-42.

  8. Hafli­i P. GÝslason,
    E­lisfrŠ­i og hßtŠkni, Raflost 2000, 38-41

  9. Hafli­i PÚtur GÝslason og Halldˇr G. Svavarsson,
    Nřjar hugmyndir um ger­ GaAs tvista, Raflost 2002, bls. 9-10

  10. Jˇn Tˇmas Gu­mundsson, Sveinn Ëlafsson og Hafli­i PÚtur GÝslason,
    RŠktun me­ sameinda˙­un, Raflost 25 (2003) 22-24



tilbaka




A 4.1
Greinar Ý ritrřndum rß­stefnuritum -
     
Articles in peer-reviewed conference proceedings      
  1. H.P. Gislason, B. Monemar, M.E. Pistol, D.C. Herbert, A. Kana'ah and B.C. Cavenett,
    Electronic structure and phonon interaction of neutral Cu-Li centres in GaP, in Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by J.D. Chadi and W. A. Harrison (Springer, New York, 1985) p. 635.

  2. B. Monemar, P.O. Holtz, H.P. Gislason, N. Magnea, Ch. Uihlein, and P.L. Liu,
    Bound excton recombination in highly Zn-doped ZnTe, in Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by J.D. Chadi and W.A. Harrison (Springer, New York, 1985) p. 675

  3. H.P. Gislason, B. Monemar, and Z.G. Wang,
    Acceptor-like complexes of Cu and Cu-Li in GaAs, in Proceedings of the 13th International Conference on Defects in Semiconductors, Coronado, 1984, edited by L.C. Kimerling and J.M. Parsey Jr., (AIME, New York 1985) p. 1013.

  4. H.P. Gislason, and G.D. Watkins,
    Optically detected magnetic resonance of copper doped Gallium Phosphide, in Microscopic Identification of Electronic Defects in Semiconductors, Ed. by N.M. Johnson, S.G. Bishop and G.D. Watkins, (MRS, Pittsburg 1985) p. 425.

  5. B. Monemar, U. Lindefelt, W.M. Chen, H.P. Gislason, P.O. Holtz and M.E. Pistol.
    Magnetic properties of neutral complex defects in semiconductors. Proc. 18th Int. Conf. on the Physics of Semiconductors, ed. by. O. Engström (1986) p. 939.

  6. W.M. Chen, M. Godlewski, B. Monemar and H.P. Gislason,
    PGa - antisite complexes in GaP studied with optical detection of magnetic resonance,in Gallium Arsenide and Related Compounds 1987, ed. by. A. Christou and H.S. Ruppert, (IOP Publishing Ltd, Bristol, 1988) p. 77.

  7. B. Monemar, Q.X. Zhao, H.P. Gislason, W.M. Chen, P.O. Holtz and M. Ahlström.
    Characterization of a neutral AsGa-CuGa pair defect in GaAs, in Gallium Arsenide and Related Compounds 1987, ed. by. A. Christou and H.S. Ruppert, (IOP Publishing Ltd, Bristol, 1988) p. 423.

  8. W.M. Chen, M. Godlewski, B. Monemar, and H.P. Gislason,
    Optically detected magnetic resonance studies of complex antisite-related defects in bulk LEC GaP, in Defects in Electronic Materials, ed. by. M. Stavola, S.J. Pearton and G. Davies, (Materials Research Society, Pittsburgh, 1988) p. 467.

  9. W.M. Chen, M. Godlewski, B. Monemar, and H.P. Gislason,
    Optical detection of magnetic resonance (ODMR) studies of the electronic structure of complex defects in GaP, in Defects in Electronic Materials, ed. by M. Stavola, S.J. Pearton and G. Davies, (Materials Research Society, Pittsburgh, 1988) p.443.

  10. Hafliði P. Gíslason,
    Microscopic Identification of Defect Complexes. (Invited paper) in Semi-insulating III-V Materials, ed by G. Grossmann and L. Ledebo (Adam Hilger, Bristol, 1988) p. 311.

  11. M. Godlewski, W.M. Chen, B. Monemar and H.P. Gislason,
    PGa-Cu antisite related deep complex defects in GaP studied with optically detected magnetic resonance, in Semi-insulating III-V Materials, ed by G. Grossmann and L. Ledebo (Adam Hilger, Bristol, 1988) p. 325

  12. K. Ando, A. Katsui, G.D. Watkins and H.P. Gislason,
    Defect structure transformation on anion Frenkel pair defects in InP Defect Control in Semiconductors. Edited by K. Sumino, Elsevier Science Publishers B.V. (North Holland), 1990, p. 921.

  13. Hafliði P. Gíslason, Einar Ö. Sveinbjörnsson, B. Monemar og M. Linnarsson,
    Photoluminescence study of GaAs diffused with Li, in Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, Edited by D.J. Wolford, J. Bernholc and E.E. Haller, Materials Research Society, Pittsburgh, 1990, p. 127.

  14. H.P. Gíslason, H. Sun, F. Rong, and G.D. Watkins,
    Antisite defects in as-grown and electron-irradiated InP, in Physics of Semiconductors, Vol. 3, edited by E.M. Anastassakis and J.D. Joannopoulos (World Scientific, Singapore 1990), p 666.

  15. H.P. Gislason, B.H. Yang, E. Janzén and B. Monemar.
    Correlation between electrical compensation and shifting photoluminescence bands in Li-diffused GaAs, in Physics of Semiconductors. (World Scientific, Singapore 1993) p. 1621.

  16. H.P. Gislason, B.H. Yang and M. Linnarsson.
    Properties of high-resistivity Li-diffused GaAs. Semi-Insulating III-V Materials. Ed. C. Miner. (IOP publishing Ltd. 1993) p. 55.

  17. B.H. Yang, T. Egilsson, and H.P. Gislason, Semi-insulating GaAs:Cu. In Semi-insulating III-V Materials, ed. M. Godlewski (World Scientific, Singapore 1994) p. 263

  18. H.P. Gislason, T. Egilsson, and B.H. Yang,
    Passivation and reactivation of copper and zinc acceptors by field drift of lithium in p-type GaAs. In The Physics of Semiconductors, ed. D.J. Lockwood (World Scientific, Singapore 1995) p. 2407.

  19. E.Ö. Sveinbjörnsson, S. Kristjánsson, O. Engström and H.P. Gislason,
    Hydrogen and lithium passivation of gold in silicon, a comparative study, Mat. Res. Soc. Symp. Proc. 378 (1995) 371

  20. H.P. Gislason and K. Leosson,
    Passivation of shallow and deep impurities by hydrogen and light metal ions, Proceedings of the 23rd International Conference on the Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore 1996) p. 3013

  21. D. Seghier and H.P. Gislason,
    On deep levels in semi-insulating LEC-GaAs investigated by means of photo induced current transient spectroscopy. Proc IEEE-SIMC9 meeting, Toulouse (1996). Ed. C. Fontaine, p. 145.

  22. B.H. Yang, D. Seghier and H.P. Gislason,
    Compensation mechanism and transport behaviour of semi-insulating GaAs:Cu. Proc IEEE-SIMC9 meeting, Toulouse (1996). Ed. C. Fontaine, p. 166.

  23. D. Seghier and H.P. Gislason,
    Electrical characterization of nitrogen acceptors in p-ZnSe/p-GaAs grown by molecular beam epitxy, in Defects in Electronic Materials II, ed. J. Michel, T. Kennedy, K. Wada, and K. Thonke, p. 573 (1997)

  24. K. Leosson and H.P. Gislason,
    Evidence for non-correlation between the 0.15 eV and 0.44 eV Cu-related acceptor levels in GaAs in Defects in Electronic Materials II, ed. J. Michel, T. Kennedy, K. Wada, and K. Thonke, p. 453 (1997)

  25. D. Seghier and H.P. Gislason,
    Effects of Cu diffusion on electrical properties of GaAs, Proc 1998 IEEE-SIMC-X conference. Ed. Z. Lilienthal-Weber and C. Miner, p. 161 (1999)

  26. D. Seghier and H.P. Gislason, Persistent photoconductivity in nitrogen-doped p-type Zn(S)Se/GaAs, Proc 1998 IEEE-SIMC-X conference. Ed. Z. Lilienthal-Weber and C. Miner, p. 313 (1999)

  27. D. Seghier and H.P. Gislason,
    Electrical characterization of Mg-related energy levels and compensation mechanism in Mg-doped GaN, Proc 1998 IEEE-SIMC-X conference. Ed. Z. Lilienthal-Weber and C. Miner, p. 255 (1999)

  28. D. Seghier and H.P. Gislason,
    Observation of metastable states and their relation to the persistent photocurrent in Mg-doped GaN, Proceedings of the 25th International Conference on the Physics of Semiconductors, Eds. N. Miura and T. Ando, p. 1605 (2001).

  29. J.T. Gudmundsson, H.G. Svavarsson, and H.P. Gislason,
    Hopping conduction in lithium-diffused and annealed GaAs, Proceedings of the IEEE-SIMC-XII-2002 conference, 9-12 (2002).

  30. D. Seghier and H.P. Gislason,
    Electrical Characterisation of hydrogenated n-type AlGaN alloys grown by MOCVD. Proceedings of the IEEE-SIMC-XII-2002 conference, 52-55(2002)

  31. D. Seghier and H.P. Gislason,
    Low-frequency noise in AlGaN-based Schottky barriers. Proceedings of the 27th International Conference on the Physics of Semiconductors (Flagstaff 2004) pp. 433-434.

  32. D. Seghier and H.P. Gislason,
    Noise Measurements In Mg-doped GaN. Proceedings of the 27th International Conference on the Physics of Semiconductors (Flagstaff 2004) pp. 229-230.

  33. D. Seghier and H.P. Gislason,
    Noise processes and their origin in Mg-doped GaN. Proceedings of the IEEE-SIMC-XIII conference, (Beijing 2004) pp. 226-229.

  34. D. Seghier, T.M. Arinbjarnason, and H.P. Gislason,
    Deep-Defect Related Generation-Recombination Noise in GaAs Proceedings of the IEEE-SIMC-XIII conference, (Beijing 2004) pp. 234-237.

  35. D. Seghier and H.P. Gislason,
    Noise spectroscopy on defects with thermally activated capture in GaAs, 11th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors, Sept. 15-19, Beijing (2005). Materials Science and Semiconductor Processing 9 (2006) 359-361.

  36. D. Seghier and H.P. Gislason,
    DX-like defects in AlGaN/GaN structures by means of noise spectroscopy, 11th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors, Sept. 15-19, Beijing (2005). Materials Science and Semiconductor Processing 9 (2006) 41-44.



tilbaka




A 4.2
Bˇkakaflar -
     
Articles in other conference proceedings      
  1. H.P. Gislason, M.E. Pistol, and B. Monemar,
    Properties of Gallium Phosphide doped with Cu and Li, in: Proceedings of the 10th Nordic Semiconductor Meeting, Helsingör, B4:1 (1982).

  2. H.P. Gislason, B. Monemar, and Z.G. Wang,
    Acceptorlike and isoelectronic complexes of Cu, Cu-Li and Cu-Zn in GaAs, in: Proceedings of the 11th Nordic Semiconductor Meeting, Espoo (1984).

  3. H.P. Gislason,
    Excitons bound to isoelectronic defect complexes in compound semiconductors. Invited paper. Study Group of Solid State Spectroscopy, Malmö, 1984, AS/Science/Spec (36) 1, p. 29.

  4. W.M. Chen, B. Monemar, M. Godlewski, and H.P. Gislason,
    Optical detection of magnetic resonance for studies of defects in semiconductors, in Proc. 12th Nordic Semiconductor Meeting, Jevnåker, Norway, (1986) p. 309.

  5. H.P. Gislason,
    Antisite defects in Indium Phosphide, invited paper, in Proc. 14th Nordic Semiconductor Meeting 1990. Edited by Ole Hansen, Århus 1990, p. 64.

  6. H.P. GÝslason and E.Ö, Sveinbjörnsson,
    The role of native defects in the optical properties of Li-diffused GaAs, in Proc. 14th Nordic Semiconductor Meeting 1990. Edited by Ole Hansen, Århus 1990, p. 137.

  7. H.P. Gislason, B.H. Yang and M. Linnarsson,
    Semi-insulating Li-diffused GaAs, in Proc. 15th Nordic Semiconductor Meeting. Ritstj. S. Franssila og R. Paananen. (VTT, Espoo, 1992) p. 329.

  8. J. Pétursson, B.H. Yang and H.P. Gislason,
    Optical measurements on Li-diffused GaAs, in Proc. 15th Nordic Semiconductor Meeting. Editors S. Franssila og R. Paananen. (VTT, Espoo, 1992) p. 345.

  9. T. Takahashi, K. Inoue, H.P. Gislason, S. Suzuki, K. Hara, H. Munekata, and H. Kukimoto,
    Thermal annealing of N-doped ZnSe layers with the application of an electric field, 14th Electronic Materials Symposium, July 1995, Izu-Nagaoka



tilbaka




┌tdrŠttir -      
Printed Abstracts      
  1. H.P. Gislason, B. Monemar, M.E. Pistol, P.J. Dean, and D.C. Herbert,
    Complex defects caused by Cu and Li in Gallium Phosphide, inProc. 4th "Lund" Int. Conf. on Deep Level Impurities in Semiconductors. Eger, Hungary (1983) p. 30.

  2. B. Monemar, P.O. Holtz, N. Magnea, and H.P. Gislason,
    Transfer of defect related electronic excitation in highly doped ZnTe, in Proc. 4th "Lund" Int. Conf. on Deep Level Impurities in Semiconductors. Eger, Hungary (1983) p. 112.

  3. H.P. Gislason, and G.D. Watkins,
    Optically detected magnetic resonance (ODMR) of Cu-doped Gallium Phosphide. Bull, Am. Phys. Soc. 30, 303 (1985).

  4. D. Jeon, H.P. Gislason, and G.D. Watkins,
    MCD-ODMR study of the Zn vacancy in ZnSe. Bull. Am. Phys. Soc., March (1986).

  5. D. Jeon, H.P. Gislason and G.D. Watkins,
    Identification of the PIn antisite in InP by ODENDOR. Bull. Am Phys. Soc. 32, 516 (1987).

  6. Haflidi P. Gislason,
    Photoluminescence Study of Lithium Diffused GaAs. Bull. Am. Phys. Soc. 34, 416 (1989).

  7. K. Inoue, H.P. Gislason, K. Yanashima, T. Takahashi, K. Hara, H. Munekata and H. Kukimoto,
    Effect of annealing under an electric field for p-ZnSe, Japan Applied Physics Spring Meeting, March 1995, Hiratsuka

  8. H. Ólafsson, A. Ólafsson, and H.P. Gíslason,
    Can photoacoustics help surface photo-voltage measurements of semiconductors? 10th International Conference on Photoacoustic and Photothermal Phenomena, Rom, 23-27 august (1998). Paper 7-P21




tilbaka






Gerlinde Xander
09. mars 2007